Proton conductivity study on three CS/IL@fle-MOF membranes

The low-cost, high specific surface area and porosity, controlled pore size, and chemical properties of metal–organic framework (MOF) materials have attracted much attention in the exploration of proton conduction. The method of chemically modifying MOF structures or introducing conductive medium into the holes can effectively improve the proton conductivities of the materials. Here, the structural tunability of ionic liquid (IL) and flexible MOF (fle-MOF) materials are matched to give full play to the conductivity of IL, the framework support, and the microporous effect of MOFs, which achieves the synergistic effect of performance and expands the temperature range of proton transfer. Three kinds of CS/IL@fle-MOF membranes were prepared by combining three fle-MOFs with 1-carboxymethyl-3-methylimidazole (CMMIM) in different proportions to obtain 15 pieces of membranes. The comparative analyses show that CS/IL@fle-MOF membranes have excellent proton conduction performance at a wider temperature range (263–353 K) and lower relative humidity (75% RH). Among them, the proton conductivities of CS/CMMIM@MIL-88A-25% and CS/CMMIM@MIL-88B-125% are up to 1.33 and 1.42 S cm⁻¹ at 75% RH and 353 K, respectively; whereas those of CS/CMMIM@MIL-53(Fe)-75% and CS/CMMIM@MIL-88B-125% reach up to 2.1 × 10⁻³ and 1.28 × 10⁻³ S cm⁻¹ at 75% RH and 263 K, respectively. The E_a of CS/CMMIM@fle-MOFs is in the range of 0.1–0.5 eV, suggesting that the proton transport follows predominantly the typical Grotthuss transfer mechanism. The results of this study indicate that the CS/CMMIM@fle-MOF membranes combinations offer great potential for the design of composite porous proton-conducting materials.     

Athermal and Soft Multi-Nanopatterning of Azopolymers: Phototunable Mechanical Properties

Imprinting nanopatterns on flexible substrates has diverse applications in advanced fabrication. However, the traditional thermal nanoimprint lithography (T-NIL) often causes shrinkage upon cooling. Here, a simple yet versatile method is introduced to fabricate multiple nanopatterns on a flexible substrate coated with an azopolymer by combining athermal nanoimprint lithography (AT-NIL) and photolithography. The azopolymer has various mechanical properties upon photoirradiation: 1) phototunable glass-transition temperatures (T_g) and concomitantly photoinduced switch from glassy plastic to viscoplastic polymer; 2) prominent modulation of viscoplasticity under light illumination at different wavelengths. Regionally selective multiple nanopatterns are conveniently fabricated, presenting angle-dependent structural color images on poly(ethylene terephthalate) (PET) substrates. The flexible, athermal and multiple nanopatterning method has the potential for on-demand fabrication of complex nanopatterns.     

Multi-scale finite element simulation on large deformation behavior of wood under axial and transverse compression conditions

Acta Mechanica Sinica - Multi-scale finite element method is adopted to simulate wood compression behavior under axial and transverse loading. Representative volume elements (RVE) of wood...     

Visual exploration of dependency graph in source code via embedding-based similarity

Journal of Visualization -  A large software system contains millions of lines of source code, and the development often involves many developers over a long period. How to understand and...     

Tantalum Nitride Nanosheets for Photoacoustic Imaging-Guided Photothermal Cancer Therapy

In this study, the synthesis of TaN nanosheets and their application in theranostic agents is reported. After coating polyethylene glycol (PEG) on the TaN nanosheets, the as-synthesized PEG-modified TaN nanosheets (TaN-PEG) show good stability and biocompatibility. Because of their high absorbance in the near-IR region, TaN-PEG can be utilized as photoacoustic imaging contrast agents for tumor imaging. Moreover, TaN-PEG has significant photothermal conversion performance, exhibiting effective laser-induced tumor ablation capability. The TaN-PEG possessing excellent photoacoustic contrast effect and photothermal properties thus have great promise in theranostic applications, especially imaging-guided cancer treatment.     

A reconfigurable terahertz polarization converter based on metal–graphene hybrid metasurface

A metal-graphene hybrid metasurface polarization converter is designed in this Letter.The unit cell of the hybrid metasurface is composed of a butterfly-shaped structure whose branches are connected by multi-layer graphene sheets.The proposed device can be reconfigured from linear-to-circular polarization to cross-polarization by changing the Fermi energy of graphene.The simulation results show that for three-layer graphene,the device acts as a linear-to-circular polarization converter when EF=0 eV and switches to a cross-polarization converter when EF=0.5 eV.Compared with single-layer graphene,the device with three-layer graphene can maintain the cross-polarization conversion performance under low Fermi energy.Furthermore,two equivalent circuits in the x and y directions are developed to understand the working mechanism of the device.     

复杂势场量子弹球中疤痕态的量子化条件

量子疤痕是波函数在经典不稳定周期轨道周围反常凝聚的一种量子或波动现象.人们对疤痕态的量子化条件进行了大量研究,对深入理解半经典量子化起到了一定的促进作用.之前大部分研究工作主要集中在硬墙量子弹球上,即给定边界形状的无穷深量子势阱系统.本文研究具有光滑复杂势场的二维量子弹球系统,考察疤痕态的量子化条件及其重复出现的规律,得到了与硬墙弹球不一样的结果,对理解这类现象是一个有益的补充.这些结果将有助于理解具有无规长程杂质分布的二维电子系统的态密度谱和输运行为.     

Investigation of β-Ga_2O_3 films and β-Ga_2O_3/GaN heterostructures grown by metal organic chemical vapor deposition

In this work,(-201) β-Ga_2O_3 films are grown on GaN substrate by metal organic chemical vapor deposition(MOCVD). It is revealed that the β-Ga_2O_3 film grown on GaN possesses superior crystal quality, material homogeneity and surface morphology than the results of common heteroepitaxial β-Ga_2O_3 film based on sapphire substrate. Further, the relevance between the crystal quality of epitaxial β-Ga_2O_3 film and the β-Ga_2O_3/GaN interface behavior is investigated. Transmission electron microscopy result indicates that the interface atom refactoring phenomenon is beneficial to relieve the mismatch strain and improve the crystal quality of subsequent β-Ga_2O_3 film. Moreover, the energy band structure of β-Ga_2O_3/GaN heterostructure grown by MOCVD is investigated by X-ray photoelectron spectroscopy and a large conduction band offset of 0.89 eV is obtained. The results in this work not only convincingly demonstrate the advantages of β-Ga_2O_3 films grown on GaN substrate, but also show the great application potential of MOCVD β-Ga_2O_3/GaN heterostructures in microelectronic applications.     

Surface passivation in n-type silicon and its application in silicon drift detector

Based on the surface passivation of n-type silicon in a silicon drift detector(SDD), we propose a new passivation structure of SiO2/Al2O3/SiO2 passivation stacks. Since the SiO2 formed by the nitric-acid-oxidation-of-silicon(NAOS)method has good compactness and simple process, the first layer film is formed by the NAOS method. The Al2O3 film is also introduced into the passivation stacks owing to exceptional advantages such as good interface characteristic and simple process. In addition, for requirements of thickness and deposition temperature, the third layer of the SiO2 film is deposited by plasma enhanced chemical vapor deposition(PECVD). The deposition of the SiO2 film by PECVD is a low-temperature process and has a high deposition rate, which causes little damage to the device and makes the SiO2 film very suitable for serving as the third passivation layer. The passivation approach of stacks can saturate dangling bonds at the interface between stacks and the silicon substrate, and provide positive charge to optimize the field passivation of the n-type substrate.The passivation method ultimately achieves a good combination of chemical and field passivations. Experimental results show that with the passivation structure of SiO2/Al2O3/SiO2, the final minority carrier lifetime reaches 5223 μs at injection of 5×10¹⁵ cm^-3. When it is applied to the passivation of SDD, the leakage current is reduced to the order of nA.     

通过表面机械加工调控Zr52.5Cu17.9Ni14.6Al10Ti5非晶合金的结构和韧性

作为一种新型结构材料, 非晶态合金的韧性需要进一步提高. 提高非晶态合金韧性的方法有引入枝晶相、调整其成分改变其泊松比影响其剪切带衍生、裂纹扩展等.本文通过表面机械加工的方法来调控非晶态合金的微观结构及韧性. 我们采用真空电弧熔炼、亚稳态薄板离心浇铸系统制备了Zr_52.5Cu_17.9Ni_14.6Al₁₀Ti₅ (原子百分比) (Vit105)非晶合金板,并用表面机械研磨处理方法(surface mechanical attrition treatment, SMAT), 在Vit105板上形成纳米尺度局域类晶体序结构. 基于差示扫描量热分析、纳米压痕实验, 我们发现SMAT处理后的Vit105合金板表面附近弛豫焓更低, 微观结构更加均匀、稳定. 通过显微维氏硬度计测试, 发现SMAT处理后样品的表面附近硬度增大,硬度值分布也更均匀. 通过三点弯断裂实验, 可得到SMAT处理后合金板缺口韧度值从70.7 ± 4.7 MPa·m1/2提高到112.8 ± 3.7 MPa·m1/2. SMAT处理后合金板断裂后, 缺口前端剪切带密度比未处理的更大. Vit105合金板韧性的提高源于SMAT处理对剪切带萌生的促进作用. 该研究表明,表面机械加工可以在非晶态合金中形成局域类晶体有序结构, 影响其结构均匀性, 增大其硬度, 促进剪切带萌生, 提高其韧性. 表面机械加工作为一种新型的改变材料性能的手段, 具有广阔的应用前景.